FDMS1D2N03DSD parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Model:

FDMS1D2N03DSD

Description:

PT11N 30/12 & PT11N 30/12

Stock:

11419

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.27

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Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

19A(Ta),70A(Tc),37A(Ta),164A(Tc)

Drain source voltage (Vdss)

30V

FET Type

2 N Channel(two)Asymmetric type

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

33nC @ 10V,117nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

1410pF @ 15V,4860pF @ 15V

On resistance (maximum) for different Ids and Vgs

3.25 mΩ @ 19A,10V,0.97 mΩ @ 37A,10V

Power - maximum

2.1W(Ta),26W(Tc),2.3W(Ta),42W(Tc)

Vgs (th) (maximum) for different Ids

2.5V @ 320µA,3V @ 1mA

packing

TR,CT

series

PowerTrench®

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-PowerWDFN

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载FDMS1D2N03DSD.pdf

FDMS1D2N03DSD（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory11419,Price reference "real-time change" China/Hongkong。 FDMS1D2N03DSD package/specs, Download FDMS1D2N03DSD、Datasheet。